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Selective epitaxy of InGaN/GaN multiple quantum wells on GaN side facetsYANG, G. F; CHEN, P; HUA, X. M et al.Physica. E, low-dimentional systems and nanostructures. 2012, Vol 45, pp 61-65, issn 1386-9477, 5 p., cArticle

Investigation of structural and optical anisotropy of m-plane InN films grown on γ-LiAlO₂(100) by metal organic chemical vapour depositionFU, D; ZHANG, R; LIU, B et al.Journal of physics. D, Applied physics (Print). 2011, Vol 44, Num 24, issn 0022-3727, 245402.1-245402.5Article

Broad excitation of Er luminescence in Er-doped HfO₂ filmsWANG, J. Z; SHI, Z. Q; SHI, Y et al.Applied physics. A, Materials science & processing (Print). 2009, Vol 94, Num 2, pp 399-403, issn 0947-8396, 5 p.Article

Al incorporation, structural and optical properties of Al_xGa_1-xN (0.13≤x≤0.8) alloys grown by MOCVDLIU, B; ZHANG, R; HAN, P et al.Journal of crystal growth. 2008, Vol 310, Num 21, pp 4499-4502, issn 0022-0248, 4 p.Article

CVD growth of Ge Films on Graded Si_1-xGe_x : C BuffersWANG, R. H; HAN, P; ZHENG, Y. D et al.Proceedings of SPIE, the International Society for Optical Engineering. 2008, pp 69842M.1-69842M.4, issn 0277-786X, isbn 978-0-8194-7182-6, 1VolConference Paper

Initial stages of the cubic-InN growth with the technique of the pre-deposition of indiumBI, Z. X; ZHANG, R; XIE, Z. L et al.Journal of materials science. 2007, Vol 42, Num 15, pp 6377-6381, issn 0022-2461, 5 p.Article

Temperature dependence of strain in Al_0.22Ga_0.7gN/GaN heterostructures with and without Si₃N₄ passivationCHEN, D. J; SHEN, B; ZHANG, K. X et al.Thin solid films. 2007, Vol 515, Num 10, pp 4384-4386, issn 0040-6090, 3 p.Conference Paper

Ge-dots/Si multilayered structures fabricated by Ni-induced lateral crystallizationSHI, Y; YAN, B; PU, L et al.Physica status solidi. A, Applications and materials science (Print). 2006, Vol 203, Num 4, pp 776-780, issn 1862-6300, 5 p.Conference Paper

Characterization of 4H-SiC grown on AlN/Si(100) by CVDQIN, Z; HAN, P; GU, S. L et al.Thin solid films. 2006, Vol 515, Num 2, pp 580-582, issn 0040-6090, 3 p.Conference Paper

Correlation between green luminescence and morphology evolution of ZnO filmsYE, J. D; GU, S. L; ZHENG, Y. D et al.Applied physics. A, Materials science & processing (Print). 2005, Vol 81, Num 4, pp 759-762, issn 0947-8396, 4 p.Article

Dielectric properties of AlN film on Si substrateBI, Z. X; ZHENG, Y. D; ZHANG, R et al.Journal of materials science. Materials in electronics. 2004, Vol 15, Num 5, pp 317-320, issn 0957-4522, 4 p.Article

Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric filmsLI, W. P; LIU, Y. M; LIU, Z. G et al.Applied physics. A, Materials science & processing (Print). 2001, Vol 72, Num 1, pp 85-87, issn 0947-8396Article

Realization of silicon quantum wires based on Si/SiGe/Si heterostructureLIU, J. L; SHI, Y; WANG, F et al.Zeitschrift für Physik. B, Condensed matter. 1996, Vol 100, Num 4, pp 489-491, issn 0722-3277Article

Vibration energy relaxation of CH₄ via CRIIF (coherent Raman induced infrared fluorescence)WANG, N. G; ZHENG, Y. D; YANG, S. J et al.Optics communications. 1988, Vol 65, Num 3, pp 199-201, issn 0030-4018Article

Electroless Nickel Deposition of a Palladium-Activated Self-Assembled Monolayer on Polyester FabricGUO, R. H; JIANG, S. X; ZHENG, Y. D et al.Journal of applied polymer science. 2013, Vol 127, Num 5, pp 4186-4193, issn 0021-8995, 8 p.Article

Metal―Semiconductor―Metal Ultraviolet Avalanche Photodiodes Fabricated on Bulk GaN SubstrateXIE, F; LU, H; CHEN, D. J et al.IEEE electron device letters. 2011, Vol 32, Num 9, pp 1260-1262, issn 0741-3106, 3 p.Article

InGaN/GaN multi-quantum-well planar metal-semiconductor-metal light-emitting diodesMIAO, C; LU, H; DU, X. Z et al.Electronics Letters. 2008, Vol 44, Num 6, pp 441-443, issn 0013-5194, 3 p.Article

Room-temperature ferromagnetism in Mn-N Co-doped p-ZnO epilayers by metal-organic chemical vapor depositionLIU, S. M; GU, S. L; YE, J. D et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 91, Num 3, pp 535-539, issn 0947-8396, 5 p.Article

Structural characterization of AlGaN/AIN Bragg reflector grown by metalorganic chemical vapor depositionJI, X. L; JIANG, R. L; LIU, B et al.Physica status solidi. A, Applications and materials science (Print). 2008, Vol 205, Num 7, pp 1572-1574, issn 1862-6300, 3 p.Article

Modeling analysis of the MOCVD growth of ZnO filmLIU, S. M; GU, S. L; ZHU, S. M et al.Journal of crystal growth. 2007, Vol 299, Num 2, pp 303-308, issn 0022-0248, 6 p.Article

Chinese chart publishing data updating technique and applicationLIU, G. H; PENG, R. C; CHEN, Y et al.Proceedings of SPIE, the International Society for Optical Engineering. 2007, pp 67510T.1-67510T.9, issn 0277-786X, isbn 978-0-8194-6911-3Conference Paper

Two-dimensional electron gas densities in AlGaN/AlN/GaN heterostructuresKONG, Y. C; ZHENG, Y. D; ZHOU, C. H et al.Applied physics. A, Materials science & processing (Print). 2006, Vol 84, Num 1-2, pp 95-98, issn 0947-8396, 4 p.Article

Investigation of dislocations and defects in epitaxial lateral overgrown GaN by photoelectrochemical wet etchingWANG, F; ZHANG, R; XIU, X. Q et al.Materials letters (General ed.). 2003, Vol 57, Num 8, pp 1365-1368, issn 0167-577X, 4 p.Article

Study of wing tilt in asymmetrically and laterally overgrowth of thick GaN filmsCHEN, Z. Z; QIN, Z. X; SHEN, B et al.Physica. B, Condensed matter. 2003, Vol 327, Num 1, pp 34-38, issn 0921-4526, 5 p.Article